Fabrication method of semiconductor luminescent device
US7629187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2007 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Apr 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/185
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabrication method of a semiconductor luminescent device includes forming a compound semiconductor layer having a structure in which a first conductivity-type clad layer, an active layer, a second conductivity-type clad layer are layered in order on a substrate, the second conductivity-type being different from the first conductivity-type and forming a low-refractive-index region in a waveguide in an area to be an end face from which an output light from the waveguide in the compound semiconductor layer is emitted, the low-refractive-index region having an equivalent refractive-index lower than that of another area in the waveguide. The step of forming the low-refractive-index region includes determining a width of the low-refractive-index region in a longitudinal direction of the waveguide so that an emission angle of the output light of the semiconductor luminescent device is controlled to be a desirable value, and forming the low-refractive-index region having the width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.