Controlling dopant diffusion in a semiconductor region
US7629240B2 · kind B2 · utility
1Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2005 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Mar 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dopant diffusion into semiconductor material is controlled during fabrication of a semiconductor structure by depositing a nucleation layer over a first layer of the semiconductor structure and depositing a device layer containing the dopant over the nucleation layer. The nucleation layer serves as a diffusion barrier by limiting in depth the diffusion of the dopant into the first layer. The dopant can include arsenic (As).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.