Semiconductor sensor production method and semiconductor sensor
US7629263B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 18, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jan 11, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0842
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor production method includes the steps of (A) forming a first etching mask layer on a support part segment of a backside semiconductor layer, except on a portion of the support part segment which portion is along edges of the support part segment; (B) forming a second etching mask layer on the support part segment and a proof mass part segment of the backside semiconductor layer; (C) selectively removing segments of the back side semiconductor layer between the proof mass part segment and the support part segment by performing etching; (D) making the proof mass part segment of the back side semiconductor layer thinner than the support part segment of the back side semiconductor layer by performing etching; and (E) removing the first etching mask layer by using a wet etching method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.