Semiconductor device
US7629642B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2005 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jul 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a semiconductor region having a source region, a drain region, and a channel region provided between the source region and the drain region, a first tunnel insulation film formed on the channel region, a barrier layer formed on the first tunnel insulation film and having an energy barrier, a second tunnel insulation film formed on the barrier layer, a charge storage portion formed on the second tunnel insulation film and comprising an insulation film expressed by SiY(SiO2)X(Si3N4)1-XMZ (where, M denotes an element other than Si, O, and N, and 0≦X≦1, Y>0, and Z≧0), and a control electrode formed on the charge storage portion and controlling a height of the energy barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.