Patent · US Expired

Radiation-emitting semi-conductor component

US7629670B2 · kind B2 · utility

0Cited by

5References

9Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Rainer Butendeich · Regensburg, DE
Norbert Linder · Wenzenbach, DE
Bernd Mayer · Graz, AT
Ines Pietzonka · Donaustauf, DE

Key dates

Filing date	Jun 25, 2004
Grant date	Dec 8, 2009
Priority date	—
Expiry date	Jun 25, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3086
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.