Patent · US Active

Reorientation of magnetic layers and structures having reoriented magnetic layers

US7629789B2 · kind B2 · utility

5Cited by
4References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 16, 2008
Grant dateDec 8, 2009
Priority date
Expiry dateJul 16, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/325
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive assembly includes at least a first and a second magnetoresistive element formed on a common substrate, the at least first magnetoresistive element comprising a first pinned ferromagnetic layer being magnetized in a first direction, the at least second magnetoresistive element comprising a second pinned ferromagnetic layer being magnetized in a second direction different than the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.