Fet sensor with specially configured gate electrode for the highly sensitive detection of analytes
US7632670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2002 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Nov 3, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2333/908
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a sensor comprising a substrate, a source contact region, a drain contact region, and the gate oxide of a transistor. A gate electrode is disposed between the gate oxide and a detection electrode made of a nonconducting material. The contact area Asens between the gate electrode and the detection electrode is larger than the contact area Agate between the gate electrode and the gate oxide, whereby the receptor can be immobilized on the surface of the detection electrode in a technically simple manner while the small contact area Agate between the gate electrode and the transistor provides for high sensitivity for detecting the analyte. According to the inventive method for detecting at least one analyte, at least one analyte is brought into contact with a receptor immobilized at the detection electrode so as to modify the electrical charge at the surface of the detection electrode. The analyte is detected by detecting the modified voltage in the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.