Nitride semiconductor thin film and method for growing the same
US7632697B2 · kind B2 · utility
2Cited by
0References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 12, 2006 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Feb 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.