Method of forming ESD protection device with thick poly film

US7632725B2 · kind B2 · utility

Assignee

• TPO Displays Corp. · TW

Inventors

• Ming-Dou Ker · Hsinchu, TW
• Chih-Kang Deng · Taipei, TW
• Tang-Kui Tseng · 東區, TW
• An Shih · Changhua City, TW
• Sheng-Chieh Yang · Kaohsiung, TW

Key dates

• Filing date: Jun 13, 2006
• Grant date: Dec 15, 2009
• Expiry date: Feb 5, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811

Abstract

An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.