Substrate for growing Pendeo epitaxy and method of forming the same
US7632742B2 · kind B2 · utility
3Cited by
3References
12Claims
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Key dates
| Filing date | Jan 9, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Apr 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.