Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7633034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2005 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Feb 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second lase…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.