Scintillator plate
US7633072B2 · kind B2 · utility
0Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a scintillator plate comprising on a substrate a phosphor layer formed by a process of vapor deposition, wherein a thallium compound having a melting point within ±70° C. of that of CsI and CsI are deposited on a substrate to form a thallium-activated phosphor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.