Tunable radiation emitting semiconductor device
US7633081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2004 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The structure is operable to emit light radiation in response to a current flow therethrough. Moreover, the elongated structure is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the structure further includes an electrode arrangement for applying an electric field to the elongated structure for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the structure in response to the current flow therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.