Metamorphic buffer on small lattice constant substrates
US7633083B2 · kind B2 · utility
11Cited by
6References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 2005 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Jun 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger lattice constant of the semiconductor device. In one application, the semiconductor device has a lattice constant of between approximately 6.1 and 6.35 angstroms, metamorphic buffer layers include Sb (e.g., AlInSb buffer layers), and the substrate has a smaller lattice constant (e.g., Si, InP or GaAs substrates).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.