Light emitting transistor
US7633084B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Mar 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/3026
Abstract
A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side. An electron transporting layer 19 can be provided between the light emitting layer 17 and the drain electrode 18.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.