Semiconductor device and manufacturing method thereof
US7633107B2 · kind B2 · utility
10Cited by
0References
6Claims
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Key dates
| Filing date | Aug 17, 2006 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
On forming a ferroelectric capacitor structure, an IrO2 film and an IrOx film which are constituents of an upper electrode layer are sequentially formed on a capacitor film. By RTA treatment at 600° C. to 750° C., in this case, at 725° C. for about one minute under an O2 atmosphere, only a surface layer of the IrOx film is oxidized, and a highly oxidized layer which is higher in oxidation degree as compared with the other portion of the IrOx film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.