Integration of silicon boron nitride in high voltage and small pitch semiconductors
US7633125B2 · kind B2 · utility
67Cited by
1References
20Claims
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Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Apr 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integration of silicon boron nitride in high voltage semiconductors is generally described. In one example, a microelectronic apparatus includes a semiconductor substrate upon which transistors of an integrated circuit are formed, a plurality of transistor gates formed upon the semiconductor substrate, a gate spacer dielectric disposed between the gates, and a contact etch stop dielectric disposed upon the gates and gate spacer dielectric, the contact etch stop dielectric comprising silicon boron nitride (SiBN) to reduce breakdown of the contact etch stop dielectric in high voltage applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.