High-performance field effect transistors with self-assembled nanodielectrics
US7633130B2 · kind B2 · utility
1Cited by
3References
25Claims
0Family size
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Key dates
| Filing date | Mar 19, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Mar 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.