Semiconductor device and method of manufacturing the same
US7633136B2 · kind B2 · utility
1Cited by
7References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Mar 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an interlayer insulating film on a substrate. A runner part includes a plurality of runner lines spaced apart from each other by a regular interval under the interlayer insulating film. A fuse cut part includes a plurality of fuse lines spaced apart from each other by a wider interval than the interval between the runner lines. A via in the interlayer insulating film connects a fuse line and a runner line to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.