Patent · US Expired

Optically pumped surface emitting semiconductor laser device

US7633982B2 · kind B2 · utility

2Cited by
6References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 31, 2005
Grant dateDec 15, 2009
Priority date
Expiry dateFeb 14, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/18
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A surface emitting semiconductor laser device, having at least one monolithically integrated pump radiation source (20), in which the pump radiation source (20) has at least one edge emitting semiconductor structure (9) that is suitable for emission of electromagnetic radiation whose intensity profile transversely with respect to the emission direction (z) of the semiconductor structure follows a predeterminable curve. Such a surface emitting semiconductor laser device emits electromagnetic radiation having a particularly good beam quality.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.