Optically pumped surface emitting semiconductor laser device
US7633982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2005 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Feb 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser device, having at least one monolithically integrated pump radiation source (20), in which the pump radiation source (20) has at least one edge emitting semiconductor structure (9) that is suitable for emission of electromagnetic radiation whose intensity profile transversely with respect to the emission direction (z) of the semiconductor structure follows a predeterminable curve. Such a surface emitting semiconductor laser device emits electromagnetic radiation having a particularly good beam quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.