Etchant composition and manufacturing method for thin film transistor array panel
US7635436B2 · kind B2 · utility
3Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Apr 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.