Method for bonding a semiconductor substrate to a metal substrate
US7635635B2 · kind B2 · utility
8Cited by
10References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2006 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Jul 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.