Atmospheric pressure chemical vapor deposition
US7635647B2 · kind B2 · utility
2Cited by
4References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2005 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Jan 5, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.