Method of smoothening dielectric layer
US7635651B2 · kind B2 · utility
10Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Nov 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of smoothening a dielectric layer. First, a substrate is provided. Next, a dielectric layer is formed on the semiconductor substrate. Finally, the dielectric layer is smoothened by a plasma treatment employing a silane based gas and a nitrogen based gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.