Patent · US Active

Continuous multigate transistors

US7635881B2 · kind B2 · utility

2Cited by
1References
14Claims
0Family size

Inventor

Key dates

Filing dateFeb 28, 2008
Grant dateDec 22, 2009
Priority date—
Expiry dateFeb 28, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/28105
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An N doped area neighboring to a P doped area on a semiconductor material, function respectively as a first gate and a second gate for transistors. A dielectric layer is made under the gates. A source and a drain are made under and near two sides of the dielectric layer, electrically coupled to the gate to form continuous multigate transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.