Semiconductor device
US7635890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2007 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Aug 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a control gate electrode provided above the charge storage layer, a second insulating film provided between the control gate electrode and the charge storage layer, the second insulating film between adjacent charge storage layers including a first region having permittivity lower than that of the second insulating film on a top surface of the charge storage layer in a cross-section view of a channel width direction of the nonvolatile memory cell, and the first region having composition differing from that of the second insulating film on the top surface of the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.