Insulating film and electronic device
US7635900B2 · kind B2 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2008 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Jul 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.