High frequency device module and manufacturing method thereof
US7635918B2 · kind B2 · utility
29Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2008 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Apr 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency device module of an embodiment of a current invention includes: an insulation substrate in which electrodes are provided on the front surface thereof and a grounding substrate is provided on the rear surface thereof; a high frequency device provided on the insulation substrate with a terminal of the device connected to the electrodes; potting material for covering the high frequency device; and a metallic layer provided on the potting material and connected to the grounding substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.