Multi-port thin-film memory devices
US7635988B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2008 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Jul 14, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a first aspect, a semiconductor storage device, comprising: a metal line coupled to a gate of an access transistor, wherein the gate material is deposited substantially above the metal line. In a second aspect, a semiconductor storage device, comprising: a first port to write data to a storage element; and a second port to read a signal generated by the storage element; and a first metal line coupled to a gate of an access transistor coupled to the first port; and a second metal line coupled to a gate of an access transistor coupled to the second port; wherein, the gates of said access transistors are formed on a gate material deposited substantially above the metal of first and second metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.