Semiconductor memory device
US7636256B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Dec 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
Abstract
A semiconductor memory device includes a memory cell string provided on a semiconductor substrate, and a first select transistor including a gate insulation film, which is provided on the semiconductor substrate having a recess structure which is lower, only at a central portion thereof, than the semiconductor substrate on which the memory cell string is provided, and a gate electrode provided on the gate insulation film, the first select transistor selecting the memory cell string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.