Magnetron source for deposition on large substrates
US7638022B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2006 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Oct 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron source for producing a magnetic field near a surface of a target in a deposition system include a first magnet, a second magnet separated by a gap from the first magnet along a first direction, and a target holder configured to hold the target in the gap between the first magnet and the second magnet. The target includes a sputtering surface from which target material can be sputtered and deposited on a substrate. The target holder is so configured that the sputtering surface is substantially parallel to the first direction and the first magnet and the second magnet can produce a magnetic field near a surface of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.