Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
US7638253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2008 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Apr 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern.wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.