Patent · US Active

Method for fabrication of semiconductor devices on lightweight substrates

US7638353B2 · kind B2 · utility

7Cited by
7References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 3, 2008
Grant dateDec 29, 2009
Priority date
Expiry dateJun 3, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A method for making a semiconductor device having front-surface electrical terminals in which the device is manufactured so as to include a bottom electrode, a top electrode and a semiconductor body therebetween. A first bus bar is disposed in a groove in the semiconductor body. It is in electrical communication with the bottom electrode, and includes a tab portion which projects from the device. A second bus bar is in electrical communication with the top electrode, and is disposed atop the first electrode, and electrically insulated therefrom. The tab of the first bus bar provides one terminal of the device and is folded onto the second bus bar and is electrically insulated therefrom. The second bus bar provides the second terminal of the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.