Semiconductor device capacitor fabrication method
US7638389B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Dec 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device capacitor fabrication method that is capable of enabling the simultaneous use of an oxide capacitor and a PIP capacitor of a semiconductor device depending upon whether metal line terminals are used. The semiconductor device capacitor fabrication method can include forming an active region and a first gate electrode over a semiconductor substrate, partially depositing a silicon nitride layer, over which a capacitor will be formed, over the first gate electrode, forming a second gate electrode over the silicon nitride, sequentially forming a first insulation layer and a second insulation layer over the resultant structure and forming line terminals extending through the first insulating layer and the second insulating layer for a transistor and a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.