Method for reducing dislocation threading using a suppression implant
US7638415B2 · kind B2 · utility
0Cited by
8References
9Claims
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Key dates
| Filing date | Nov 7, 2008 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Nov 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well (240) within a substrate (210) and forming a suppression implant (420) within the substrate (210). The method for manufacturing the zener diode may further include forming a cathode (620) and an anode (520) within the substrate (210), wherein the suppression implant (420) is located proximate the doped well (240) and configured to reduce threading dislocations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.