Semiconductor device and method of forming wires of semiconductor device
US7638423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Feb 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming wires of a semiconductor device including forming a first metal wire on a semiconductor substrate; forming a first insulating film on the first metal wire; etching a portion of the first insulating film to expose a surface portion of the first metal wire; forming a first barrier metal film on sidewalls of the opening and the exposed first metal wire; etching a portion of the first barrier metal film on the first metal wire to expose a surface portion of the first metal wire; performing a heat treatment process on the exposed surface portion of the first metal wire to improve surface roughness; and forming a second wire by filling the opening using a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.