InAs/GaSb infrared superlattice photodiodes doped with Beryllium
US7638791B2 · kind B2 · utility
2Cited by
1References
9Claims
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Key dates
| Filing date | Mar 5, 2008 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Apr 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/222
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.