Power semiconductor device and power conversion device using the same
US7638839B2 · kind B2 · utility
10Cited by
1References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 9, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Dec 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A power semiconductor device having a low loss and a high reliability and a power conversion device using the power semiconductor device are provided. In the power semiconductor device, a plurality of MOS type trench gates are positioned to be spaced by at-least two types of intervals therebetween, a low-resistance floating n+ layer is positioned on a main surface of a semiconductor substrate adjacent to a floating p layer positioned between the adjacent MOS type trench gates having the broad interval to achieve consistency between a low output value and a high breakdown resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.