Maintenance operations for multi-level data storage cells
US7639542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Dec 7, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods, including computer software, for reading data from a flash memory cell involve detecting voltages from a group of memory cells. The group of memory cells have associated metadata for error detection, and each memory cell stores a voltage representing a data value selected from a plurality of possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages. Alternative data values for the memory cells having the uncertain data values are determined. A combination of alternative data values is selected, and an error detection test is performed using the metadata associated with the memory cells and the selected combination of alternative data values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.