Patent · US Active

Thermal shunt for active devices on silicon-on-insulator wafers

US7639719B2 · kind B2 · utility

19Cited by

1References

19Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Alexander W. Fang · Goleta, US
Richard Jones · San Mateo, US
Hyundai Park · Goleta, US
Matthew Sysak · Lompoc, US

Key dates

Filing date	Dec 31, 2007
Grant date	Dec 29, 2009
Priority date	—
Expiry date	Mar 27, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/1032
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optimized structure for heat dissipation is provided that may include two types of thermal shunts. The first type of thermal shunt employed involves using p and n metal contact layers to conduct heat away from the active region and into the silicon substrate. The second type of thermal shunt involves etching and backfilling a portion of the silicon wafer with poly-silicon to conduct heat to the silicon substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.