Ga-In-O amorphous oxide transparent conductive film, and transparent conductive base material comprising this conductive film formed thereon
US7641818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2008 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Dec 5, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/β-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.