Patent · US Active

Room temperature synthesis of GaN nanopowder

US7641880B2 · kind B2 · utility

1Cited by
5References
18Claims
0Family size

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Inventors

Key dates

Filing dateMay 3, 2006
Grant dateJan 5, 2010
Priority date—
Expiry dateJul 21, 2027

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01P2004/64
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

In the direct production of GaN by the metathesis of Li3N and GaCl3 or GaBr3 or GaI3, the reaction rate and yields can be greatly enhanced by including diethyl ether in the reaction system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.