Manufacturing method for ferroelectric memory device
US7642099B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 28, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Dec 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
Abstract
A manufacturing method for a ferroelectric memory device includes: forming a ferroelectric capacitor on a substrate, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode; forming a first hydrogen barrier film that covers the ferroelectric capacitor by a chemical vapor deposition method; forming a dielectric film on the first hydrogen barrier film; forming a sidewall composed of the dielectric film on a side of the ferroelectric capacitor by etching back the dielectric film; forming a second hydrogen barrier film on the first hydrogen barrier film and the sidewall by a chemical vapor deposition method; and forming an interlayer dielectric film on the second hydrogen barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.