Method of forming a photodiode that reduces the effects of surface recombination sites
US7642116B1 · kind B1 · utility
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Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Oct 29, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination sites, and a second p-type surface region that provides a substantial change in the dopant concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.