Method for forming nitride crystals
US7642122B2 · kind B2 · utility
73Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Oct 5, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jul 21, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 104 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.