SON MOSFET using a beam structure and method for fabricating thereof
US7642167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Mar 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
The present invention relates to a SON (Silicon-On-Nothing) MOSFET having a beam structure and an inverter using thereof and the method for fabricating thereof to increase the efficiency and performance of a MOSFET. A method for fabricating the SON MOSFET according to the present invention comprises the steps of (a) patterning a passivation layer on a substrate, (b) doping boron on the substrate, (c) removing the patterned passivation layer, (d) forming the beam structure on the substrate by anisotropical etching on the region not doped with boron of the substrate, (e) depositing an insulating material on the substrate having the beam structure, and (f) deposing an electrode material on the disposed insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.