Electrical fuse structure and method
US7642176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2008 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Apr 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical fuse and a process of programming the same are presented. An electrical fuse comprises a lower level silicide layer on a non-doped or lightly-doped polysilicon layer, an upper level conductive layer, and a tungsten contact coupled between the lower level silicide layer and the upper level conductive layer. The tungsten contact and a neck portion of the silicide layer are the programmable portion of the electrical fuse. High post-programming resistance is achieved by a first programming phase that depletes silicide in the silicide layer, followed by a second programming phase that depletes tungsten in the tungsten contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.