Semiconductor substrate and manufacturing method for the same
US7642179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2005 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Sep 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30635
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.