Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
US7642185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.