Method for etching and apparatus for etching
US7642194B2 · kind B2 · utility
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5References
10Claims
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Key dates
| Filing date | Aug 17, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.